| 摘要 |
<p>OF THE DISCLOSUREA HYBRID TSV AND METHOD FOR FORMING THE SAME5Generally, the subject matter disclosed herein relates to conductive via elements, such as through-silicon vias (TSV's), and methods for forming the same. One illustrative methodof forming a conductive via element disclosed herein includes forming a via opening in asubstrate, the via opening extending through an interlayer dielectric layer formed above the 10 substrate and a device layer formed below the interlayer dielectric layer, and extending intothe substrate. The method also includes forming a first portion of the conductive via element comprising a first conductive contact material in a bottom portion of the via opening, andforming a second portion of the conductive via element comprising a second conductivecontact material different from the first conductive contact material in an upper portion of the 15 via opening and above the first portion.Fig. 2c</p> |
