发明名称 PLASMA PROBE AND METHOD FOR PLASMA DIAGNOSIS
摘要 <P>PROBLEM TO BE SOLVED: To provide a device and a method for measuring plasma parameter data in a chamber of a plasma reactor. <P>SOLUTION: In order to measure plasma parameter data on the surface of a single flat surface Langmuir probe in contact with plasma, a bias capacitor 2 is connected between the single flat surface Langmuir probe 1 and a DC bias power source 3 on the surface of the single flat surface Langmuir probe 1 in contact with plasma. Subsequently, as a result of measurement of DC bias, the discharge current of the bias capacitor 2 is measured, and the probe potential in a single probe is measured during the discharge so that the presence and/or thickness of a dielectric film on the probe surface is detected. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012234817(A) 申请公布日期 2012.11.29
申请号 JP20120105802 申请日期 2012.05.07
申请人 IMEC 发明人 VLADIMIR SAMARA;JEAN-FRANCOIS DE MARNEFFE;WERNER BOULLART
分类号 H05H1/00;H05H1/46 主分类号 H05H1/00
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