| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a sidewall accurately on the sidewall side of a gate electrode, and to provide a semiconductor device. <P>SOLUTION: At first, a first insulating film 40 is formed on the gate electrode 34 and the peripheral region thereof on one side of an SOI substrate 5. Subsequently, a second insulating film 42 is formed of a material different from that of the first insulating film 40 so as to be laminated thereon. Thereafter, the first insulating film 40 and the second insulating film 42 are removed so that the etching rate of the first insulating film 40 is lower than that of the second insulating film 42, while leaving a portion on the sidewall 34a side of the gate electrode 34 in the first insulating film 40 and the second insulating film 42, thus forming a sidewall 45 on the sidewall 34a side of the gate electrode 34. <P>COPYRIGHT: (C)2013,JPO&INPIT |
