| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the mask dimension fidelity and dimension uniformity within an exposure shot of a fine trench pattern or a hole pattern, and to develop high dry etching durability by forming a negative pattern by development with an organic solvent using a specified resist composition. <P>SOLUTION: A method for forming a negative pattern comprises the steps of: applying a resist composition containing a specified ring-open metathesis polymer-hydrogenated product [A] and a specified (meth)acrylate resin [B], as a base resin, on a substrate; heating the composition after the application to form a resist film; exposing the resist film to a high energy beam; heating the film after the exposure; and then selectively dissolving an unexposed portion of the resist film with a developing solution containing an organic solvent. The resist composition has high dissolution contrast in development with an organic solvent and shows high dry etching durability even when an acid-labile group is deprotected by exposure and heating processes. <P>COPYRIGHT: (C)2013,JPO&INPIT |
