| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose electrical characteristics are difficult to vary in microfabrication. <P>SOLUTION: A semiconductor device includes: an oxide semiconductor film including a first region, a pair of second regions in contact with a side face of the first region, and a pair of third regions in contact with side faces of the pair of second regions; a gate insulation film provided on the oxide semiconductor film; and a first electrode overlapping with the first region on the gate insulation film. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region including dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions. <P>COPYRIGHT: (C)2013,JPO&INPIT |
