| 摘要 |
<p>A semiconductor device (10) of one embodiment includes a plurality of unit cells (12), each of which has an FET structure. The semiconductor device is provided with: gate electrode wiring (24), which is electrically connected to a gate electrode (18) of the FET structure of each of the unit cells; a gate electrode pad (30), which is electrically connected to the gate electrode wiring, and connects each gate electrode to the outside; and a probe electrode pad, which is electrically connected to the gate electrode wiring, and with which an inspection probe (56) is brought into contact.</p> |
