发明名称 |
PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER |
摘要 |
A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s). |
申请公布号 |
EP2526743(A2) |
申请公布日期 |
2012.11.28 |
申请号 |
EP20110735001 |
申请日期 |
2011.01.11 |
申请人 |
KLA-TENCOR CORPORATION |
发明人 |
JENSEN, EARL;SUN, MEI |
分类号 |
H05H1/46;C23C14/54;C23C16/52;G01N27/60;G01N27/62;G01R19/00;H01J37/32;H01L21/205 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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