| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a microstructure by which a high resolution is achieved without deteriorating flexibility. <P>SOLUTION: Firstly, a negative type resist 102 is applied to a substrate 101 as shown in Fig. 1(b). Next, the negative type resist 102 is irradiated with an electron beam (corresponding to an energy beam) 103 with a first pattern as shown in Fig. 1(c) (first exposure step). Subsequently the negative type resist 102 is developed so as to form a block-shaped resist 102A (corresponding to a first structure) as shown in Fig. 1(d) (first development step). Subsequently the block-shaped resist 102A is irradiated with the electron beam 103 with a second pattern different from the first pattern as shown in Fig. 1(e) (second exposure step). Finally, the block-shaped resist 102A is developed so as to form a resist 102B with a shape of three orthogonally-crossed nanowires (corresponding to a second structure) as shown in Fig. 1(f) (second development step). <P>COPYRIGHT: (C)2010,JPO&INPIT |
