| 摘要 |
A process for producing a nitride compound semiconductor represented by a general formula, InxGayAlzN (where x+y+Z=1, 0<=x<=1, 0<=y<=1, and 0<=z<=1), characterized in that a non-doped nitride compound semiconductor (A) represented by a general formula, InaGabAlcN (where a+b+c=1, 0<=a<=1, 0<=b<=1, and 0<=c<=1) of a thickness of 500 to 5000 Å is formed between a p-type contact layer and an n-type contact layer at a temperature within a range between 550 and 850° C. |
