发明名称 |
FORMATION METHOD OF DOPED REGION OF SOLAR CELL, SOLAR CELL, AND MANUFACTURING METHOD OF SOLAR CELL |
摘要 |
<P>PROBLEM TO BE SOLVED: To disclose a process where a doped region of a solar cell is formed. <P>SOLUTION: A first doped region doped by a first dopant is formed on a first surface of a silicon substrate, and a silicon oxide film is formed on the first surface. The silicon oxide film has a first silicon oxide film which corresponds to the first doped region and a second silicon oxide film which does not correspond to the first doped region. The first silicon oxide film is thicker than the second silicon oxide film. A second dopant is injected into the silicon oxide film, and a second doped region is formed at a part of the first surface of the silicon substrate which corresponds to the second silicon oxide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012235084(A) |
申请公布日期 |
2012.11.29 |
申请号 |
JP20120011973 |
申请日期 |
2012.01.24 |
申请人 |
SAMSUNG SDI CO LTD;SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM WON-KYEUN;KWAK HEE-JUNE;PARK SANG-JIN;KIM YOUNG-JIN;SEO SANG-WON |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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