| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a stepped part between a cell region and a peripheral circuit region by forming a line pattern using a partition mask. CONSTITUTION: A cell region(1000a) and a peripheral circuit region(1000b) are formed on a semiconductor substrate. A polymer layer is etched using a cutting mask. A polymer pattern is formed in the etched polymer layer. A second amorphous carbon layer(160) is formed in the upper part of the polymer pattern. A SiON is formed in the upper part of a first silicon oxide nitride layer(130).</p> |
