发明名称 PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a novolak phenol resin that enables production of photoresist with high heat resistance, high sensitivity, a high residual film ratio, and high resolution, for the photoresist used in lithography when producing a semiconductor and an LCD (liquid crystal display). <P>SOLUTION: A photoresist composition contains (A) novolak phenol resin obtained by reacting (a) phenol component containing m-cresol and/or p-cresol with (b) aldehyde component containing polyaldehyde, (B) photosensitive agent, and (C) propylene glycol monomethyl ether acetate and &gamma;-butyrolactone. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012234019(A) 申请公布日期 2012.11.29
申请号 JP20110101875 申请日期 2011.04.28
申请人 MEIWA KASEI KK 发明人 FURUMOTO TAKAHISA;KUROIWA SADAAKI
分类号 G03F7/023;C08G8/04;G03F7/004 主分类号 G03F7/023
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