SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves microfabrication while suppressing a defect, and provide a highly reliable semiconductor device with stable electric characteristics.

SOLUTION: By providing a convex structure for an insulation layer and providing a channel formation region of an oxide semiconductor layer in contact with the convex structure, the channel formation region is extended in a three-dimensional direction (substrate vertical direction). This can extend the effective channel length while achieving the microfabrication of a transistor. Moreover, a curved surface is formed at an upper end corner part at which an upper surface and a side surface of the convex structure intersect with each other, so that the oxide semiconductor layer includes a crystal having a c-axis perpendicular to the curved surface. This can suppress the change of the electric characteristic of the oxide semiconductor layer due to irradiation with visible light or UV light.

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