| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the heat radiation performance of a semiconductor device. <P>SOLUTION: A semiconductor device 100 includes: a semiconductor element 1; a metal plate 2 where the semiconductor element 1 is mounted on a surface; a metal film 10 provided on a rear surface 2b of a region of the metal plate 2 where the semiconductor element 1 is mounted; a cooler 4 provided at the rear surface side of the metal plate 2 and cooling the semiconductor element 1; and a filler material 6 provided between the metal plate 2 and the cooler 4 and closely attached to the rear surface 2b of the metal plate 2 and the metal film 10. The metal film 10 has a linear expansion coefficient lower than the metal plate 2 and heat conductivity higher than the filler material 6. <P>COPYRIGHT: (C)2013,JPO&INPIT |
