| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a memory cell structure which can be miniaturized. <P>SOLUTION: The semiconductor device comprises: a word line; a bit line; a power supply node; a memory element having, between the bit line and the power supply node, at least first and second regions forming a PN junction and a third region forming a PN junction with the second region; and a capacitor which is provided independently of the second region of the memory element and has a first electrode electrically connected to the second region of the memory element and a second electrode connected to the word line. <P>COPYRIGHT: (C)2013,JPO&INPIT |
