SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

A silicon carbide semiconductor device (1, 100) is provided that includes a semiconductor layer (12) made of silicon carbide and having a surface tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film (13) formed to contact the surface (12a) of the semiconductor layer (12). A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the semiconductor layer (12) and the insulating film (13) is not less than 1×10 21 cm -3 , and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the <-2110> direction in the surface (12a) of the semiconductor layer (12). A method of manufacturing the silicon carbide semiconductor device is also provided.