Photoresist composition

摘要

A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (R a ) 1 -(Ar)-S + (-CH 2 -) m €¢ - O 3 S-(CR b 2 ) n -(L) p -X
wherein each R a is independently a substituted or unsubstituted C 1-30 alkyl group, C 6-30 aryl group, C 7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C 6-30 aryl group, each R b is independently H, F, a linear or branched C 1-10 fluoroalkyl or a linear or branched heteroatom-containing C 1-10 fluoroalkyl, L is a C 1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C 5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.