| 摘要 |
<p>PURPOSE: A light emitting device is provided to prevent the generation of a leakage current by preventing electrons of an active layer from moving to an electron barrier layer. CONSTITUTION: A light emitting structure comprises an active layer(30). The active layer is formed between first and second conductive semiconductor layers. The active layer comprises a plurality of well layers and a plurality of barrier layers. The outermost barrier layer(36) among the barrier layers comprises a plurality of first layers(36b). A plurality of second layers(36a) are formed between the first layers.</p> |
