| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to implement stable electrical characteristic by forming an oxide aluminum film on a crystalline oxide semiconductor film to prevent oxygen from being discharged from the crystalline oxide semiconductor layer in a heating process. CONSTITUTION: An amorphous oxide semiconductor film(491) is formed between an insulating layer(407) and an oxide aluminum film. A heating process is performed on the amorphous oxide semiconductor film to form a crystalline oxide semiconductor film(403). The crystalline oxide semiconductor is doped with oxygen to form the amorphous oxide semiconductor film containing excessive oxygen.
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