| 摘要 |
A semiconductor device such as a high-voltage transistor (20) includes a drain electrode (31), a source electrode (32), and one or more drift regions (22a,22b) extending in the direction from the drain electrode toward the source electrode. Field plate members (24a,24b,24c) laterally surround the drift regions and are insulated from the drift regions by a dielectric layer (28a,28b,28c,28d). |
