| 摘要 |
<p>There is provided a wiring substrate 10. The wiring substrate includes: a semiconductor substrate 16 having a through hole 26; an insulating film 17, 18, 19 provided to cover an upper surface 16A, a lower surface 16B and a first surface of the semiconductor substrate 16, the first surface corresponding to a side surface of the through hole 26; a through electrode 21 provided in the through hole 26; a first wiring pattern 23 disposed on an upper surface side of the semiconductor substrate 16 and coupled to the through electrode 21; and a second wiring pattern 24 disposed on a lower surface side of the semiconductor substrate 16 and coupled to the through electrode 21. A first air gap 32 is provided between the first wiring pattern 23 and the insulating film 17 formed on the upper surface, and a second air gap 33 is provided between the second wiring pattern 24 and the insulating film 18 formed on the lower surface.</p> |
