| 摘要 |
<p>PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to keep stored data in case of power interruption and to be used for a flash memory. CONSTITUTION: A first and second charge storage layers(142,144) contact side walls of the active region of a device isolation trench(120). The first and second tunnel insulating layers are interposed between a first and second charge storage layers and the active region. A first electric charge blocking layer(180) is formed on the first and second charge storage layers. A control gate is formed on the first electric charge blocking layer.</p> |
