| 摘要 |
PURPOSE: A light sintering method of semiconductor oxide using white intense pulsed light irradiation process is provided to manufacture light sintered semiconductor oxide in short time at low cost. CONSTITUTION: A light sintering method of semiconductor oxide using white intense pulsed light irradiation process comprises the following steps: coating semiconductor oxide nano-particle paste or semiconductor oxide precursor and drying thereof; and irradiating the coated substrate with extreme short-wave white light at the room temperature and sintering thereof. The semiconductor oxide is selected from TiO2, SiO2, ZnO, ITO, FTO, IGZO or a mixture thereof. The extreme short-wave white light is irradiated through a xenon flash lamp. The pulse width of the xenon flash lamp is 0.1-100 ms. The pulse gap of the xenon flash lamp is 0.1-100 ms. The pulse number of the xenon flash lamp is 1-1000. The intensity of the xenon flash lamp is 0.01-100J/cm^2. [Reference numerals] (AA) Coating a substrate with TiO2 paste; (BB) Irradiating the coated substrate with TiO2 sinterable extreme short-wave white light; (CC) Forming light sintered TiO2 nano-particle as light catalyst |
