GROUP III NITRIDE SEMICONDUCTOR ELEMENT

摘要

The present invention provides the group III nitride semiconductor device that can reduce the contact resistance between the Group III nitride semiconductor region and an electrode on the Group III nitride semiconductor region when a surface of the Group III nitride semiconductor region is inclined from the c-plane. A Group III nitride semiconductor device has a semiconductor region 13, a metal electrode 17, and a transition layer 19. The semiconductor region 13 has a surface 13 a comprised of a Group III nitride crystal. The semiconductor region 13 is doped with a p-type dopant. The surface 13a is one of a semipolar surface and a nonpolar surface. The metal electrode 17 is provided on the surface 13a. The transition layer 19 is formed between the Group III nitride crystal of the semiconductor region 13 and the metal electrode 17. The transition layer 19 is made by interdiffusion of a metal of the metal electrode 17 and a Group III nitride of the semiconductor region 13.