| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in lithography, wherein the resist underlayer film reduces reflectance, has high etching resistance, high heat, and solvent resistances, and avoids wrinkling on a substrate particularly during the etching of the substrate, and also to provide a patterning process using the same. <P>SOLUTION: The method for forming a resist underlayer film of a multilayer resist film having at least three layers used in lithography includes: applying a resist underlayer film material containing a compound having a bisnaphthol group on a substrate; and curing the applied resist underlayer film material by heat treatment at a temperature of >300 to 600°C within a range of 10-600 s. <P>COPYRIGHT: (C)2010,JPO&INPIT |
