摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a highly reliable thin film semiconductor device at a low cost, and to provide a semiconductor device fabricated by that process. <P>SOLUTION: After a stripping layer is formed on a substrate, a transistor is fabricated on the stripping layer, and an insulator is formed on the transistor, an opening is formed to expose a part of the stripping layer and the transistor is stripped from the substrate by a physical means. The stripping layer is formed by forming a metal film on the substrate and then forming a metal oxide film on the metal film in contact therewith by a method using solution. <P>COPYRIGHT: (C)2007,JPO&INPIT |