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发明名称
Nonvolatile memory device using oxygen-deficient metal oxide layer and the fabrication method
摘要
申请公布号
KR101206034(B1)
申请公布日期
2012.11.28
申请号
KR20060045154
申请日期
2006.05.19
申请人
发明人
分类号
H01L27/115;H01L21/8247
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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