| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to easily protect a second spacer layer of an NMOS(n-channel metal oxide semiconductor) region by forming a capping layer on a boundary part of the NMOS region and a P-well pickup region at a height that the second spacer layer is not exposed. CONSTITUTION: A first region, a second region, and a third region are formed in a peripheral circuit region of a semiconductor substrate(200). A gate(215) is formed on an upper portion of semiconductor substrate of the first and second regions. A first spacer layer(217) and a second spacer layer(220) are formed on the entire surface of the semiconductor plate including a gate. A capping layer(230) which is completely buried in a third region is formed on an upper portion of the semiconductor substrate including a second spacer layer. A capping layer pattern is formed on the upper portion of the second spacer layer in the first region.
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