发明名称 |
Thin film transistor compositions, and methods relating thereto |
摘要 |
A process for forming at least one transistor on a substrate is described. The substrate comprises a polyimide and a nanoscopic filler. The polyimide is derived substantially or wholly from rigid rod monomers and the nanoscopic filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for thin film transistor applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability. |
申请公布号 |
US8319299(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20090622789 |
申请日期 |
2009.11.20 |
申请人 |
AUMAN BRIAN C.;BOUSSAAD SALAH;CARNEY THOMAS EDWARD;KOURTAKIS KOSTANTINOS |
发明人 |
AUMAN BRIAN C.;BOUSSAAD SALAH;CARNEY THOMAS EDWARD;KOURTAKIS KOSTANTINOS |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|