OXIDE SEMICONDUCTOR DEVICE, METHOD OF FORMING AN OXIDE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE HAVING AN OXIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A DISPLAY DEVICE HAVING AN OXIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: An oxide semiconductor device, a method for manufacturing the same, a display device having the oxide semiconductor device, a method for manufacturing the display device having the oxide semiconductor device are provided to effectively remove etching damage and residual stress which is generated in a gate insulating layer by forming a recess on the gate insulating layer between a drain electrode and a source electrode. CONSTITUTION: A gate electrode(10) is formed on a substrate(5). A gate insulating layer(15) includes a recess structure which is placed on the top of the gate electrode. A source electrode(20) is formed on one side of the gate insulating layer. A drain electrode(25) is formed on the other side of the gate insulating layer. An active pattern(30) is formed on the source electrode and the drain electrode.