发明名称 |
Nitrogen-plasma surface treatment in a direct bonding method |
摘要 |
Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates. |
申请公布号 |
US8318586(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20090994792 |
申请日期 |
2009.04.28 |
申请人 |
LIBRALESSO LAURE;MORICEAU HUBERT;MORALES CHRISTOPHE;RIEUTORD FRANCOIS;VENTOSA CAROLINE;CHEVOLLEAU THIERRY;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
LIBRALESSO LAURE;MORICEAU HUBERT;MORALES CHRISTOPHE;RIEUTORD FRANCOIS;VENTOSA CAROLINE;CHEVOLLEAU THIERRY |
分类号 |
H01L21/30;H01L21/31 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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