| 发明名称 |
Semiconductor component structure with vertical dielectric layers |
| 摘要 |
A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described. |
| 申请公布号 |
US8319261(B2) |
申请公布日期 |
2012.11.27 |
| 申请号 |
US20110984934 |
申请日期 |
2011.01.05 |
| 申请人 |
MAUDER ANTON;SEDLMAIER STEFAN;ERICHSEN RALF;WEBER HANS;HAEBERLEN OLIVER;HIRLER FRANZ;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER ANTON;SEDLMAIER STEFAN;ERICHSEN RALF;WEBER HANS;HAEBERLEN OLIVER;HIRLER FRANZ |
| 分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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