Low creep metallization for optoelectronic applications

摘要

A metallization on a semiconductor substrate is disclosed in the form of a laminate comprising a plurality of layers of a conducting metallization for providing electrical conductivity, interspersed with a plurality of layers of another metallization. By providing many layers the thickness of each individual layer can be reduced. Reduction in thickness of each layer leads to a reduction in grain size and a consequent reduction in creep over the lifetime of a device.