发明名称 |
Surface processing method |
摘要 |
In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer. |
申请公布号 |
US8318034(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20100833406 |
申请日期 |
2010.07.09 |
申请人 |
SATOH NAOYUKI;NAGAYAMA NOBUYUKI;NAGAKUBO KEIICHI;TOKYO ELECTRON LIMITED |
发明人 |
SATOH NAOYUKI;NAGAYAMA NOBUYUKI;NAGAKUBO KEIICHI |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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