发明名称 |
In situ growth of oxide and silicon layers |
摘要 |
A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide. |
申请公布号 |
US8317921(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20050124329 |
申请日期 |
2005.05.06 |
申请人 |
FERRO ARMAND;RAAIJMAKERS IVO;FOSTER DERRICK;ASM AMERICA, INC. |
发明人 |
FERRO ARMAND;RAAIJMAKERS IVO;FOSTER DERRICK |
分类号 |
C23C16/52;C23C16/00;C23C16/06;C23C16/22;C23C16/44;C23C16/455;C23C16/48;C23F1/00;C30B25/02;C30B25/14;C30B29/06;H01L21/205;H01L21/28;H01L21/306;H01L21/311;H01L21/316;H01L21/336 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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