发明名称 |
Non-volatile semiconductor memory devices having charge trap layers between word lines and active regions thereof |
摘要 |
A non-volatile memory device includes: word line disposed on a substrate; an active region crossing over the word line; and a charge trap layer that is between the word line and the active region. |
申请公布号 |
US8319276(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20100712366 |
申请日期 |
2010.02.25 |
申请人 |
NAKANISHI TOSHIRO;PARK CHANJIN;CHOI SIYOUNG;KOO BONYOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAKANISHI TOSHIRO;PARK CHANJIN;CHOI SIYOUNG;KOO BONYOUNG |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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