发明名称 |
Semiconductor device and method for manufacturing the semiconductor device |
摘要 |
It is disclosed that a semiconductor device includes an oxide semiconductor layer provided over a gate insulating layer, a source electrode layer, and a drain electrode layer, in which a thickness of the gate insulating layer located in a region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer. |
申请公布号 |
US8319216(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20090612711 |
申请日期 |
2009.11.05 |
申请人 |
AKIMOTO KENGO;TSUBUKU MASASHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
AKIMOTO KENGO;TSUBUKU MASASHI |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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