发明名称 |
Electrostatic chuck cleaning during semiconductor substrate processing |
摘要 |
Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station. |
申请公布号 |
US8316867(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US201113189811 |
申请日期 |
2011.07.25 |
申请人 |
JENNINGS DEAN C.;FOAD MAJEED;SIMMONS JONATHAN;APPLIED MATERIALS, INC. |
发明人 |
JENNINGS DEAN C.;FOAD MAJEED;SIMMONS JONATHAN |
分类号 |
B08B5/00 |
主分类号 |
B08B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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