发明名称 Semiconductor device and method of forming vertical interconnect in FO-WLCSP using leadframe disposed between semiconductor die
摘要 A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor die. An encapsulant is deposited over the carrier, leadframe, and semiconductor die. A plurality of conductive vias is formed through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die. An interconnect structure is formed over the encapsulant and electrically connected to the conductive vias. A first channel is formed through the interconnect structure, encapsulant, leadframe, and partially through the carrier. The carrier is removed to singulate the semiconductor die. A second channel is formed through the plate of the leadframe to physically separate the bodies of the leadframe.
申请公布号 US8318541(B2) 申请公布日期 2012.11.27
申请号 US20100853865 申请日期 2010.08.10
申请人 SHIN HANGIL;CHO NAMJU;CHI HEEJO;STATS CHIPPAC, LTD. 发明人 SHIN HANGIL;CHO NAMJU;CHI HEEJO
分类号 H01L21/50;H01L21/60 主分类号 H01L21/50
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