发明名称 |
Method of reading data in non-volatile memory device |
摘要 |
In a method of reading data from a non-volatile memory device, read data is generated based on a word line voltage. The read data includes data read from a plurality of sectors included in the non-volatile memory device. Bad sector data is transferred data based on read data and bad sector information. The bad sector data corresponds to data read from at least one bad sector included in the plurality of sectors. The bad sector information is updated by checking error bits of the bad sector data. The word line voltage is generated based on the updated bad sector information. |
申请公布号 |
US8321765(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20100702481 |
申请日期 |
2010.02.09 |
申请人 |
LEE JIN-WOOK;HWANG SANG-WON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-WOOK;HWANG SANG-WON |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|