发明名称 |
Multi-bit phase change memory devices |
摘要 |
A multi-bit phase change memory device including a phase change material having a plurality of crystalline phases. A non-volatile multi-bit phase change memory device may include a phase change material in a storage node, wherein the phase change material includes a binary or ternary compound sequentially having at least three crystalline phases having different resistance values according to an increase of temperature of the phase change material. |
申请公布号 |
US8320170(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20100656716 |
申请日期 |
2010.02.16 |
申请人 |
HWANG YOUNG-NAM;PARK SOON-OH;JEONG HONG-SIK;JEONG GI-TAE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG YOUNG-NAM;PARK SOON-OH;JEONG HONG-SIK;JEONG GI-TAE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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