发明名称 Method of manufacturing a semiconductor device
摘要 Chipping of semiconductor chips is to be prevented. A semiconductor device comprises a semiconductor chip having a main surface, a plurality of pads formed over the main surface, a rearrangement wiring formed over the main surface to alter an arrangement of the plurality of pads, and a protective film and an insulating film formed over the main surface, and a plurality of solder bumps each connected to the rearrangement wiring and arranged differently from the plurality of pads. The presence of a bevel cut surface obliquely continuous to the main surface and formed on a periphery of the main surface of the semiconductor chip prevents chipping.
申请公布号 US8319328(B2) 申请公布日期 2012.11.27
申请号 US201113240822 申请日期 2011.09.22
申请人 RENESAS ELECTRONICS CORPORATION 发明人 TAKAHASHI NORIYUKI
分类号 G01R31/26;H01L23/02;G01R1/04;G01R31/28;G01R31/30;H01L21/02;H01L21/28;H01L21/301;H01L21/60;H01L21/66;H01L21/768;H01L21/78;H01L23/12;H01L23/31;H01L23/48;H01L23/50;H01L23/52;H01L23/58;H01L29/06 主分类号 G01R31/26
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