发明名称 |
Asymmetric write current compensation |
摘要 |
An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell. |
申请公布号 |
US8320169(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US201113333598 |
申请日期 |
2011.12.21 |
申请人 |
ZHU WENZHONG;LU YONG;WANG XIAOBIN;CHEN YIRAN;WANG ALAN XUGUANG;LOU XIAOHUA;XI HAIWEN;SEAGATE TECHNOLOGY LLC |
发明人 |
ZHU WENZHONG;LU YONG;WANG XIAOBIN;CHEN YIRAN;WANG ALAN XUGUANG;LOU XIAOHUA;XI HAIWEN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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