发明名称 |
High I/O semiconductor chip package and method of manufacturing the same |
摘要 |
Provided are a high I/O semiconductor chip package in which a processor and a memory device are connected to each other via through electrodes and a method of manufacturing the high I/O semiconductor chip package. The high I/O semiconductor chip package includes: a substrate comprising a plurality of first circuit patterns on a first surface and a plurality of second circuit patterns on a second surface; a first semiconductor chip comprising a plurality of memory devices arranged on the substrate, each memory device being arranged in a matrix in chip regions partitioned by a scribe region; a second semiconductor chip stacked on the first semiconductor chip; and a plurality of through electrodes arranged along peripheral portions of the memory devices and connecting the first and second semiconductor chips to the second circuit patterns of the substrate. |
申请公布号 |
US8319324(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20070950990 |
申请日期 |
2007.12.05 |
申请人 |
LEE JONG-JOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-JOO |
分类号 |
H01L23/36 |
主分类号 |
H01L23/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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