Optical-image-intensity calculating method, pattern generating method, and manufacturing method of semiconductor device

摘要

According to the embodiment, an optical image intensity distribution to be formed in a resist arranged on a lower layer side of a diffraction pattern is calculated by performing a whole image exposure from an upper surface side of the diffraction pattern formed on a substrate. The optical image intensity distribution is calculated by using a multimode waveguide analysis model or a fractional Fourier transform with respect to the diffraction pattern.