| 摘要 |
PURPOSE: A wetting wave front control method for reduced air entrapment during wafer entry into an electroplating bath is provided to move a wafer with minimized air entrapment by managing the entry of the wafer into electrolyte. CONSTITUTION: A wetting wave front control method for reduced air entrapment during wafer entry into an electroplating bath comprises the steps of: locating a wafer(415) horizontally at a first height above electrolyte, where the plated surface of the wafer is parallel to a plane defined as the surface of electrolyte(410); tilting the wafer by a predetermined angle in order to destroy the parallelism of the plated surface of the water to the plane; moving the wafer toward the electrolyte at a first speed along a trace approximately perpendicular to the plane; decelerating the wafer from the first speed to a second speed, wherein the leading edge of the wafer enter the electrolyte; accelerating the wafer from the second speed to a third speed until most part of the plated surface of the wafer are dipped in the electrolyte; and decelerating the wafer from the third speed to the second speed, wherein the plated surface of the wafer is dipped in the electrolyte completely.
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