GAN-BASED SIMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEROF,申请号KR20050087848-传众专利搜索

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发明名称	GAN-BASED SIMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEROF
摘要
申请公布号	KR101182581(B1)	申请公布日期	2012.11.27
申请号	KR20050087848	申请日期	2005.09.21
申请人		发明人
分类号	H01L33/02	主分类号	H01L33/02
代理机构		代理人
主权项
地址

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