发明名称 Capacitor in non-volatile memory device
摘要 The capacitor of a nonvolatile memory device includes first and second electrodes formed in the capacitor region of a semiconductor substrate to respectively have consecutive concave and convex shape of side surfaces formed along each other and a dielectric layer formed between the first and the second electrodes.
申请公布号 KR101205029(B1) 申请公布日期 2012.11.26
申请号 KR20100139179 申请日期 2010.12.30
申请人 发明人
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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