发明名称 LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A light emitting diode package and a manufacturing method thereof are provided to improve a withstand voltage by intercepting currents flowing from a conductive layer to a plating layer by forming an insulating layer on the conductive layer. CONSTITUTION: An insulating layer(113) having thermal conductivity is formed on a conductive layer(111). A metal thin film layer(115) is formed on the insulating layer. A plating layer(117) is formed on the metal thin film layer. An LED chip(130) is formed on the plating layer. A dam part(150) is formed on the insulating layer around the LED chip. A resin(170) is formed on the LED chip.
申请公布号 KR20120127853(A) 申请公布日期 2012.11.26
申请号 KR20110045601 申请日期 2011.05.16
申请人 发明人
分类号 H01L33/48;H01L33/52 主分类号 H01L33/48
代理机构 代理人
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