| 摘要 |
PURPOSE: A heterojunction solar cell and a manufacturing method thereof are provided to prevent some metals from being penetrated into an amorphous silicon layer during a process for forming a back surface electrode by forming a metal diffusion prevention layer between a back surface electrode and the amorphous silicon layer of a solar electrode. CONSTITUTION: A first intrinsic layer(202) is formed on one side of a crystalline silicon substrate(201). A second intrinsic layer(203) is formed on the other side of the crystalline silicon substrate. An ITO(Indium tin oxide) layer(204) is formed on the first intrinsic layer. A metal diffusion prevention layer(205) is formed on the second intrinsic layer. A back surface electrode layer(206) is formed on the metal diffusion prevention layer. |
